unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max features current-controlled rf resistor for switching and attenuating applications frequency range above 10 mhz up to 6 ghz especially useful as antenna switch in mobile communication very low capacitance at zero volt reverse bias at freuencies above 1 ghz (typ. 0.15 pf) vlow forward resitance very low harmonics absolute maxim um ratings ta = 25 parameter symbol value unit diode reverse voltage v r 50 v forward current i f 100 ma total power dissipation t s 116 p tot 250 mw junction temperature t j 150 operating temperature range t op -55 to +125 storage temperature range t stg -55 to +150 junction - soldering point 1) r thjs 135 k/w sales@twtysemi.com 1 of 2 http://www.twtysemi.com BAR50-03W product specification 4008-318-123
BAR50-03W electrical characteristics ta = 25 parameter symbol conditions min typ max unit reverse current i r v r = 50 v 50 na forward voltage v f i f =50ma 0.95 1.1 v v r = 1 v, f = 1 mhz 0.24 0.5 v r =5v,f=1mhz 0.2 0.4 v r =0v,f=100mhz 0.2 v r = 0 v, f = 1...1.8 ghz, all other 0.15 v r =0v,f=100mhz 25 v r =0v,f=1ghz 6 v r =0v,f=1.8ghz 5 i f =0.5ma,f=100mhz 25 40 i f = 1 ma, f = 100 mhz 16.5 25 i f = 10 ma, f = 100 mhz 3 4.5 i f =10ma,i r = 6 ma,measured at i r =3ma,r l = 100 i-region width w i 56 m i f =3ma,f=1.8ghz -0.56 i f =5ma,f=1.8ghz -0.4 i f =18ma,f=1.8ghz -0.27 v r = 0 v, f = 0.9 ghz -24.5 v r =0v,f=1.8ghz -20 v r = 0 v, f = 2.45 ghz -18 v r =0v,f=5.6ghz -12 diode capacitance c t forward resistance pf 1100 rf isolation |s21| 2 reverse parallel resistance rp charge carrier life time rr insertion loss |s21| 2 db db ns k marking marking blue a sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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